View 2SK1579_181519.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK1579
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
* Low on-resistance * High speed switching * Suitable for low voltage operation
Outline
UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SK1579
Absolute Maximum Ratings (Ta = 25C unless otherwise specified.)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* Pch* Tch Tstg
2 1
Ratings 12 7 2 4 1 150 -55 to +150
Unit V V A A W C C
Notes 1. PW 100 s, duty cycle 10% 2. Value on the almina ceramic board (12.5 x 20 x 0.7 mm)
2
2SK1579
Electrical Characteristics (Ta = 25C unless otherwise specified.)
Item Drain to source cutoff current Gate to source cutoff current Gate to source cutoff voltage Drain to source on resistance (1) Drain to source on resistance (2) Symbol Min IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 -- -- 0.4 -- -- 1 -- -- -- -- -- Typ -- -- -- 0.36 0.25 2.5 110 30 150 500 1500 Max 1 5 1.4 0.7 0.35 -- -- -- -- -- -- Unit A A V S pF pF pF ns ns ID = 0.2 A, VGS = 0, Vin = 4 V, RL = 51 Test conditions VDS = 8 V, VGS = 0 VGS = 6.5 V, VDS = 0 VDS = 5 V, ID = 100 A VGS = 2.2 V, ID = 0.5 A VGS = 4 V, ID = 1 A VDS = 5 V, ID = 1 A, VGS = 0.1 V VDS = 5 V, VGS = 0, f = 1 MHz
DC forward transfer admittance |yfs| Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Turn-off time Note 1. Marking is "DY". Ciss Crss Coss t(on) t(off)
3
2SK1579
Power vs. Temperature Derating 1.5
50 20 Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
O is per lim ati ite on d b in y R this
2 1 0.5 0.2
DS
DC
(o n
1.0
5
)
ar ea
Op
10
era
PW = 10 ms 1 Shot
0.5
tio
n(
T
C
=2
5
C)
0
50 100 Ambient Temperature Ta (C)
150
0.1 Ta = 25C 0.05 5 10 20 50 100 0.1 0.2 0.5 1 2 Drain to Source Voltage VDS (V)
Typical Output Characteristics 5 4V 3.5 V 3V 2.5 V 3
Typical Transfer Characteristics 5 Ta = -25C 25C 75C
Ta = 25C Pulse Test
Drain Current ID (A)
4
Drain Current ID (A)
4 3 2 1
2
2V
1 VGS = 1.5 V 0 2 6 8 4 10 Drain to Source Voltage VDS (V)
VDS = 5 V Pulse Test
0
1 3 4 2 Gate to Source Voltage VGS (V)
5
4
2SK1579
Drain to Source on State Resistance RDS (on) () Drain to Source on State Resistance vs. Gate to Source Voltage 0.5
Static Drain to Source on State Resistance RDS (on) () 5 2 1 0.5 0.2 0.1 0.05 0.2 4V Ta = 25C Pulse Test 2V VGS = 3 V Static Drain to Source on State Resistance vs. Drain Current
0.4
ID = 0.1 A 0.2 A
0.3 0.5 A 1 A Ta = 25C Pulse Test
0.2
0.1
0
2 1 3 4 Gate to Source Voltage VGS (V)
5
0.5
5 2 10 1 Drain Current ID (A)
20
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 1.0 Pulse Test 50
Forward Transfer Admittance vs. Drain Current VDS = 5 V Pulse Test 20 10 5 Ta = -25C 25C 75C
0.8
0.6
ID = 1 A 0.5 A ID = 0.5 A
VGS = 2 V
0.4
VGS = 4 V
2 1 0.05 0.2
0.2 1A 0 -25 2A 25 0 50 75 Case Temperature TC (C) 100
0.5
2 10 1 5 Drain Current ID (A)
20
5
2SK1579
Reverse Drain Current vs. Sourse to Drain Voltage 5
Reverse Dratin Current IDR (A)
Typical Capacitance vs. Drain to Source Voltage 500 Coss
Capacitance C (pF)
4
Pulse Test 200
Ciss 100 50 Crss
3
2 VGS = 2 V VGS = 0
20 10 5 0.1 VGS = 0 f = 1 MHz 0.2 1 5 0.5 2 Drain to Source Voltage VDS (V) 10
1
0 0 1.0 2.0 Source to Drain Voltage VSD (V)
Switching Characteristics 5,000 VGS = 4 V, VDD = 10 V PW = 2 s, Duty cycle = 1% Switching Time t (ns) 2,000 1,000 500 tf tr td (on) 0.5 1 2 0.2 Drain Current ID (A) 5 td (off)
200 100 50 0.05 0.1
6
2SK1579
Notice
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
7

▲Up To Search▲

Price & Availability of 2SK1579

	To Download 2SK1579 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .